switching diode da221 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1) ultra small mold type. (emd3) 2) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge ma pd mw tj c tstg c f mhz ? electrical characteristics (ta=25c) symbol min. typ. max. unit v f - - 1.0 v i f =10ma i r - - 0.1 av r =15v ct - - 4.0 pf v r =6v , f=1mhz parameter limits reverse voltage (repetitive peak) 20 reverse voltage (dc) 20 forward current (single) 200 average rectified forward current (single) 100 surge current t=1us 300 power dissipation 150 junction temperature 150 storage temperature ? 55 to ? 150 rarted in slash put frequency 100 capacitance between terminals parameter conditions forward voltage reverse current 4.00.1 2.00.05 1.550.1 0 3.50.05 1.750.1 8.00.2 0.50.1 1.80.2 0.30.1 1.80.1 5.50.2 0.90.2 00.1 1.5 ? 0.1 ? 0 rohm : emd3 jeita : sc-75a jedec : sot-416 dot (year week factory) (3) 1.60.2 1.60.2 1.00.1 0.80.1 0.5 0.5 (2) (1) 0.150.05 0.70.1 0.550.1 0.1min 0 0.1 0.20.1 -0.05 0.30.1 0.05 (1)d2:c (2)d1:a (3)d1:c d2:a emd3 1.0 0.7 0.5 0.5 0.7 0.7 0.6 0.6 1.3 1/3 2011.06 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
da221 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 d2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 820 830 840 850 860 870 d2 680 690 700 710 720 730 0.1 1 10 0 5 10 15 d2 0.1 1 10 0 5 10 15 0.001 0.01 0.1 1 10 100 0 5 10 15 d2 ta=125 ta= ? 25 ta=25 ta=75 ta=150 0.001 0.01 0.1 1 10 100 051015 ta=125 ta= ? 25 ta=25 ta=75 ta=150 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 1100 ta= ? 25 ta=125 ta=75 ta=25 ta=150 d2 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta= ? 25 ta=125 ta=75 ta=25 ta=150 0 1 2 3 4 5 forward voltage : v f (mv) v f -i f characteristics forward current : i f (ma) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map forward voltage : v f (mv) v f -i f characteristics forward current : i f (ma) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics reverse voltage : v r (v) v r -ct characteristics capacitance between terminals:ct(pf) v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map trr dispersion map reverse recovery time:trr(ns) f=1mhz f=1mhz ave:709.8mv ta=25 i f =10ma n=30pcs ave:849.7mv ta=25 i f =10ma n=30pcs ta=25 v r =15v n=30pcs ave:0.1065na ta=25 v r =15v n=30pcs ave:0.620na ave:1.85pf ta=25 v r =6v f=1mhz n=10pcs ave:1.20ns ta=25 v r =6v i f =10ma rl=100 ? irr=0.1*i r n=10pcs d1 d1 d1 d1 d1 d1 d1 2/3 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
da221 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) electrostatic ddischarge test esd(kv) esd dispersion map ave:0.33kv ave:0.96kv c=200pf r=0 ? c=100pf r=1.5k ? 1ms im=1ma i f =10ma 300us time mounted on epoxy board d1 0 1 2 3 4 5 6 7 8 9 10 ave:1.27kv c=200pf r=0 ? c=100pf r=1.5k ? ave:5.06kv d2 electrostatic ddischarge test esd(kv) esd dispersion map 3/3 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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